Structural Optimisation of Pure and Ag/Sn Co Doped ZnO Thin Films Synthesised via Sol Gel Dip Coating Technique

Zinc oxide has a great structural value for optoelectronic and sensing devices. The primary determinants of film performance are lattice strain control, crystallite formation, and shape. The sol-gel dip technique facilitates consistent coating in economical and low-temperature environments. Objective Pure and Ag/Sn co-doped ZnO films are synthesized in this work. It assesses defect control, crystallite correction, and structural refinement. Methodology Methanol and monoethanolamine stabilizer are used to make the zinc acetate precursor. For dual doping at optimal loading, AgNO₃ and SnCl₂ were introduced. films applied using the dip coating technique to glass substrates that have been cleaned. For structural activation, final annealing was applied at 450 °C. Phase evolution, grain packing, and bonding were characterized by XRD, SEM, and FTIR. Key Findings A hexagonal wurtzite structure with mild strain was observed in pure ZnO. Surface smoothness and grain connectivity were enhanced by Ag doping. Sn improved lattice relaxation by increasing the efficiency of ionic substitution. The largest crystallite size and the lowest strain levels were attained through co-doping. Dense grain arrangement with little vacuum development was confirmed by SEM. Comparison and Implications The findings are consistent with previous studies on single-doped ZnO systems. Compared to individually doped films, dual doping demonstrated greater fineness. The sol-gel method produced a regulated structure that was suitable for scale and reproducible. Conclusion ZnO structural integrity is greatly enhanced by Ag/Sn co-doping under sol-gel dip conditions. The technique is appropriate for sophisticated film preparation intended for optical and sensor applications.