Characterization data of the barrier effect of B4C barrier layer at the Mo-on-Si interface of Mo/Si multilayer film

he samples were prepared using direct current magnetron sputtering. The surface morphology of the multi-period thin films was characterized by atomic force microscopy (AFM, NT-MDT NTEGRA). X-ray diffraction (XRD) measurements were performed using a Panalytical Empyrean X-ray diffractometer with Cu-Kα radiation (λ = 0.154 nm). The cross-sectional structure of the multilayer films was examined by high-resolution transmission electron microscopy (HRTEM, Tecnai G2 F20 S-Twin), which is also equipped with an EDS detector having an energy resolution better than 136 eV. Depth profiling of the composition of the multi-period thin films was carried out by time-of-flight secondary ion mass spectrometry (TOF-SIMS, ULVAC-PHI Nano TOF Ⅲ), employing a 1 keV Cs⁺ ion beam for sputtering over an area of 600 × 600 μm2 and a 30keV Bi³⁺ ion beam for analysis over a region of 100 × 100 μm2. Depth-dependent elemental distribution in the single-period thin film sample was analyzed by X-ray photoelectron spectroscopy (XPS, Thermo Scientific K-Alpha). All spectra were calibrated using the C 1s peak at a binding energy of 284.8 eV as a reference. The XPS spectra were background-subtracted using the Shirley method and fitted with a Gaussian–Lorentzian peak shape model. The spectroscopic measurements were conducted at the BL08B Metrology Beamline of the National Synchrotron Radiation Laboratory in Hefei.