Research Dataset on Proton Single-Event Effects in SRAM-based FPGAs Fabricated with 16nm FinFET Technology

Irradiation Test Site: Proton Accelerator, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of SciencesIrradiation Test Period: December 2024 - July 2025Irradiation Test Samples: Xilinx Virtex UltraScale+ XCVU3P FFVC1517AAZ FPGA chips manufactured by AMD Inc.Test System: QDRPOT1GC Control and Communication SystemIrradiation Test Data Acquisition: The single event upset and single event latch-up data of the devices were obtained through online monitoring.Simulation Content: Monte Carlo simulation was performed with Geant4 software to acquire the charge deposition information induced by the bombardment of the chips by protons with different energies; TCAD software was used to conduct the simulation of single event latch-up effect of 16 nm FinFET 1.8 V I/O devices, and the simulation results of transient current response of the devices under different LET conditions were obtained.Data Processing and Presentation: Graph plotting was carried out with Origin software.