PROBLEMS OF EXISTING METHODS FOR CALCULATING THE RADIATION HARDNESS OF CMOS INTEGRATED CIRCUITS UNDER PROTON IRRADIATION

The paper examines current issues in existing methods for assessing the radiation hardness of CMOS integrated circuits under proton irradiation in the space environment. Methodological limitations of TID, DDD, and NIEL-scaling models, as well as dose-rate and thermal annealing effects, are analyzed. The need for an integrated approach combining modeling, experimental testing, and simulation to improve the reliability of radiation hardness prediction is demonstrated.