Comparative Analysis and Performance Optimization of SiC and GaN Wide Bandgap Semiconductors in Next-Generation Power Converters

This research investigates the critical transition from traditional Silicon (Si)-based power semiconductors to Wide Bandgap (WBG) materials, specifically Silicon Carbide (SiC) and Gallium Nitride (GaN). As modern electrical systems demand higher power densities and extreme efficiency—driven by the rise of electric vehicles and renewable energy integration—Silicon has reached its theoretical physical limits regarding thermal management and switching frequency. This study employs a quantitative simulation-based methodology using MATLAB/Simulink and PLECS to evaluate the performance of WBG devices within DC-DC converters and traction inverters. The results demonstrate that GaN-based designs significantly outperform Silicon in high-frequency applications (above 100 kHz), allowing for a reduction in passive component volume by up to 80%. Furthermore, SiC components showed a superior thermal profile, enabling a reduction in heatsink size by approximately 45% while maintaining safe junction temperatures. The findings conclude that while WBG materials currently incur a higher initial component cost, the reduction in system-level cooling requirements and the substantial gains in energy efficiency provide a compelling economic and technical justification for their adoption in next-generation power electronics.