Quasi-non-volatile capacitorless DRAM based on ultra-low leakage edge contact MoS2 transistor

Figshare 2026 Dataset Open access

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Authors: Wenzhong Bao, Saifei Gou, Yuxuan Zhu, Zhejia Zhang, Menglin Huang, Jinshu Zhang, Xiangqi Dong, Mingrui Ao, Qicheng Sun, Zhenggang Cai, Yan Hu, Yufei Song
+21 more Jiahao Wang, Haojie Chen, Yuchen Tian, Xinliu He, Jieya Shang, Zhengjie Sun, Qihao Chen, Yang Liu, Zihan Xu, Xiaofei Yue, Chunxiao Cong, Yin Wang, Liwei Liu, Xiaojun Tan, Mengjiao Li, Shiyou Chen, Peng Zhou, Chen Yang, Hao Meng, Mingyuan Liu, Huihui Li
DOI: 10.6084/m9.figshare.30818588
Cited by: 1

Abstract

This dataset supports the research on edge-contact (EC) two-dimensional semiconductors (2DSCs) for post-Moore era applications, as reported in the associated research article. The data correspond to the performance characterization of molybdenum disulfide (MoS2)-based field-effect transistors (FETs) and capacitorless two-transistor (2T0C) DRAM devices, fabricated via an in-situ multi-step process.

Publication details

Journal / source
Figshare
Publication date
1 January 2026
Document type
Dataset