Data for Interfacial Magnetic Coupling in CrI3/CrBr3 Heterostructures via Tunneling Magnetoresistance

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Authors: Gen Long, Binglan Wu, Wang Yushu, Ren Yi, chao zhou, Sunan Ding, Chen Xin
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Abstract

This dataset contains experimental data characterizing the electrical tunneling transport properties of CrI3/CrBr3 van der Waals magnetic heterostructures. The data is organized into a single Excel file containing three separate sheets, covering current-voltage characteristics, temperature-dependent resistance, and tunneling magnetoresistance (TMR). Detailed content description: Sheet 1: Low-Temperature I-V Characteristics Content: Current-Voltage (I-V) curves measured at low temperatures.Data Structure: The first column represents Voltage (V), and the second column represents the corresponding Current (I).Interpretation: The data demonstrates typical tunneling transport behavior. A distinct asymmetry in the I-V curves is observed under positive and negative bias polarities, which corresponds to the specific band alignment and structure of the CrI3/CrBr3 heterojunction.Sheet 2: Temperature-Dependent Tunneling Resistance Content: Evolution of tunneling resistance as a function of temperature.Data Structure: The first column represents Temperature (T), and the second column represents the corresponding Resistance (R).Interpretation: The device exhibits different transport mechanisms across temperature regimes. In the low-temperature regime, the data shows characteristic tunneling behavior, while in the high-temperature regime, it transitions to thermally activated tunneling behavior.Sheet 3: Tunneling Magnetoresistance (TMR) Content: Magnetotransport measurements showing TMR curves.Data Structure: The first column represents the external Magnetic Field (H), and the second column represents the Tunneling Magnetoresistance (TMR).Interpretation: The TMR curves exhibit complex behaviors, including sharp resistance steps, hysteresis loops, and gradual transitions. These features highlight the complex interlayer magnetic interactions within the van der Waals heterostructure. Specifically, the data suggests that the Dzyaloshinskii-Moriya Interaction (DMI) plays a significant role in the formation of specific magnetic configurations.

Fields of Study & Subjects

2D Materials and Applications Magnetic properties of thin films Multiferroics and related materials

Publication details

Journal / source
Figshare
Publication date
1 January 2026
Document type
Dataset