Experimental Observation of Hall Resistance in CrSb2 Thin Films at Different Temperatures

We report the experimental observation of Hall resistance in the antiferromagnetic semiconductor CrSb2 thin films at different temperatures. By preparing the antiferromagnetic semiconductor CrSb2 via magnetron sputtering and establishing the correlation between temperature, magnetic field, and Hall resistance, this work reveals the modulation of transport properties and the regulation mechanism of in the antiferromagnetic semiconductor CrSb2, providing experimental basis for the design of temperature-sensitive spintronic devices based on CrSb2.