Evaluation of shock-wave-induced plastic deformation of silicon single crystal using time-resolved Laue diffraction

The generation of dislocation under shock compression is a fundamental phenomenon of critical importance for understanding the initial stages of plastic deformation and subsequent fracture in solids. In our study, anisotropic compression behavior was observed for the diffraction spots -3 1 1 and 3 1 1 in the direction of shock wave propagation along [001] using time-resolved Laue diffraction, suggesting that elastic deformation had reached the elastic limit. The diffraction spots -2 -2 0 and 2 -2 0 in the shear direction were separately observed under laser-induced shock compression, and their spreading owing to the increasing mosaicity was analyzed. At the elastic limit. The crystal lattice angle changes owing to stacking fault caused by partial dislocation generation, and the transient dislocation density under shock compression can be derived from the tilt angle of separated diffraction spots. This result provides insights into the generation and growth of transient partial dislocation densities in single crystals under shock compression.