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AIP Publishing 2026 Open access

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Authors: Noriyuki Urakami, Ayuta Hasumi, Yosuke Kimoto, Yoshio Hashimoto
DOI: 10.60893/figshare.aip.31034173
Cited by: 0

Abstract

See the Supplementary Material for detailed data related to the FET characteristics of the ZrO2 and HfO2 top-gate devices and their dependence on channel thickness. Further, it provides an application of the Y-function method to another device.

Fields of Study & Subjects

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
AIP Publishing
Publication date
1 January 2026