Supplemental Material

Additional information on the structural configurations and stability of the goldene/In2Se3 vdW heterostructure; atomic structures and electronic band structures of the constituent monolayers and heterostructures at the PBE and HSE06 levels; phonon dispersion curves; layer-resolved band structures with spin-orbit coupling; ferroelectric switching energy barriers; transport characteristics and tunneling electroresistance of the goldene/In2Se3-based ferroelectric tunnel junctions; transport-direction-dependent crystal alignments; and the schematic design of a multistate nonvolatile memory device.