Supplementary Material

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Authors: Dheeraj Sapkota, Daniel Halbing, John McCloy, Matthew McCluskey, Leonard Brillson
Cited by: 0

Abstract

MC depth simulation, CL spectra and Cr intensity as a function of applied reverse bias, applied E-field calibration with R1/R2 intensity ratio, best-fit parameters of the calibration.

Fields of Study & Subjects

Semiconductor materials and interfaces Ion-surface interactions and analysis Electron and X-Ray Spectroscopy Techniques

Publication details

Journal / source
AIP Publishing
Publication date
1 January 2026