Supplementary Material
Abstract
MC depth simulation, CL spectra and Cr intensity as a function of applied reverse bias, applied E-field calibration with R1/R2 intensity ratio, best-fit parameters of the calibration.
Fields of Study & Subjects
Semiconductor materials and interfaces
Ion-surface interactions and analysis
Electron and X-Ray Spectroscopy Techniques
Publication details
- Journal / source
- AIP Publishing
- Publication date
- 1 January 2026