Supplementary Materials

See the supplementary material for Methods, Microstructure of Bi2O2Se/Te heterojunction, Photodetection behavior of the Bi2O2Se and Bi2O2Se/Te heterojunction photodetectors under the illumination of 520 nm laser, Transfer curves of Bi2O2Se and Bi2O2Se/Te heterojunction photodetectors, I-V characteristics of the Bi2O2Se and Bi2O2Se/Te heterojunction under the illumination of 1310 nm laser with various light intensities, Air stability of Bi2O2Se/Te heterojunction photodetector, R, D*, EQE and NEP of the Bi2O2Se/Te heterojunction photodetector under the illuminations of 405-1310 nm laser with power intensity of 0.57 mW/mm2, The performance comparison of Bi2O2Se/Te heterojunction photodetector and Bi2O2Se photodetectors.