Figure S1-S11,Table S1-S4

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Authors: Shuyu Li, Hongmei Luan, Xiaofang Jia, Letu Siqin, Yuan Li, Yaqing Cui, Guonan Cui, Ruijian Liu, Yu Liu, Zhonglong Zhao, Yanchun Yang, Chengjun Zhu
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Abstract

See the supplementary material for the experimental section, which includes: XRD FWHM, crystalline domain size, and refinement details; morphological and electrical characterizations such as SEM, AFM, c-AFM, and KPFM images; parameters obtained from first-principles calculations for the CZTSSe system, including electron and hole effective masses (m*), elastic constants (C3D), deformation potential constants (El), carrier mobility (μ), and lifetime; the corresponding calculation methods are also included; as well as all configurations and their corresponding energies from theoretical calculations.

Fields of Study & Subjects

Chalcogenide Semiconductor Thin Films Advanced Thermoelectric Materials and Devices Advanced Semiconductor Detectors and Materials

Publication details

Journal / source
AIP Publishing
Publication date
1 January 2026
Language
EN