High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer

AIP Publishing 2026 Open access

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Authors: Hongcai Yang, Xuelin Yang, Yang Han, Kexin Zhang, Zhenghao Chen, Junkang Wu, Xingyu Fu, Faquan Wu, Xuan Liu, Yuxia Feng, Xing Zhang, Yue Wang
+6 more Xiang Ning Kang, Guangxu Ju, Fujun Xu, Ning Tang, Xinqiang Wang, Bo Shen
DOI: 10.60893/figshare.apl.31264813
Cited by: 0

Fields of Study & Subjects

GaN-based semiconductor devices and materials Diamond and Carbon-based Materials Research Acoustic Wave Resonator Technologies

Publication details

Journal / source
AIP Publishing
Publication date
1 January 2026
Language
EN