Supplementary Material

AIP Publishing 2026 Open access

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Authors: Sai Charan Vanjari, Aditya Bhat, Matthew A Smith, Martin Kuball
DOI: 10.60893/figshare.apl.31353298
Cited by: 0

Abstract

See the Supplementary Material for data supporting the forward conduction and reverse leakage characteristics of gallium oxide trench Schottky barrier diodes with different fin widths.

Fields of Study & Subjects

Ga2O3 and related materials Silicon Carbide Semiconductor Technologies Semiconductor materials and interfaces

Publication details

Journal / source
AIP Publishing
Publication date
9 March 2026
Language
EN