Interfacial modulation enhanced field sensitivity of the magnetization reversal process in the two-dimensional ferromagnet Fe3GeTe2

Enhancing the field sensitivity of magnetization reversal process in two-dimensional ferromagnet is of great importance for ultrafast spintronic devices application. Here we show that by changing substrate, the field sensitivity of the magnetization reversal process of a 5-layered two-dimensional ferromagnet Fe3GeTe2 can be significantly enhanced. After changing the substrate from SiO2 to Au, its magnetization reversal region turns from the two-stage multi-domain reversal to the one-stage coherent reversal. Accordingly, the field sensitivity is significantly enhanced with the magnetization reversal field at 2 K largely decreased by 2572 Oe. Moreover, the enhanced field sensitivity can persist over a wide temperature range up to 150 K. Combined with the micromagnetic simulations, we propose that the significant enhancement originates from the interfacial proximity-modulated electronic structure and exchange interaction. This work would help design the next-generation high-speed spintronic devices and optimize the magnetic recording technology.