Sub-3 V Monolithic Integration of GaN-Based Micro-LEDs with p-MOSFETs

Low threshold voltage (VTH) is essential for monolithic integration of GaN-Based Micro-LEDs with metal-oxide-semiconductor field-effect transistors (MOSFETs), enabling low-power, long-lifetime Micro-displays. In this work, we achieve record-low VTH = −2.3 V in a monolithically integrated Micro-LED with a p-channel MOSFET (p-MOSFET), enabling efficient operation below 3 V. By reducing the gate dielectric thickness from 50 nm to 30 nm, VTH decreases from −9.2 V to −2.3 V, in excellent agreement with simulation, while preserving a high on/off current ratio (>10⁷). The integrated Micro-LED delivers a light output power (LOP) of 155 μW, external quantum efficiency (EQE) of 20.6%, and luminance of 2.8 M nits-matching standalone Micro-LED performance. These results establish a practical pathway toward low-voltage, high-performance monolithic active-matrix (AM) Micro-LEDs, paving the way for energy-efficient extended reality (XR) displays.