Supplemental Material 1
Abstract
In the supplementary material, the effects of intentional doping in the DPD AlGaN cladding layer (CL) and the inclusion (or omission) of an electron blocking layer (EBL) are discussed in detail. This analysis provides further insight into the design considerations and performance implications of these structural variations.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Semiconductor Lasers and Optical Devices
Photonic and Optical Devices
Publication details
- Journal / source
- AIP Publishing
- Publication date
- 1 January 2026