Supplementary Materials: Evidence of the non-radiative character of dislocations in V-pit-free InGaN/GaN quantum wells

AIP Publishing 2026 Open access

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Authors: Anna Toschi, Anna Schwab, Gulnaz Ganeeva, Yao Chen, Camille Haller, Jean-François Carlin, R. Butté, N. Grandjean
DOI: 10.60893/figshare.jap.31151821
Cited by: 0

Abstract

A. UNDERLAYER EFFECTIVE THICKNESS B. LOW INDIUM CONTENT UNDERLAYER C. FS GAN SERIES D. SCANNING TRANSMISSION ELECTRON MICROSCOPY E. TIME-RESOLVED PHOTOLUMINESCENCE F. DIFFUSION LENGTH G. QW ENERGY PEAK IN CL MAPS

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices solar cell performance optimization

Publication details

Journal / source
AIP Publishing
Publication date
1 January 2026
Language
EN