Supplementary Material: Subpicosecond thermalization of carriers in polar GaN/AlN quantum dots

AIP Publishing 2026 Open access

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Authors: Maryna Hrytsaienko, Daniel O. Siebadji Tchuimeni, Marc Ziegler, Olivier Crégut, Gordon Schmidt, Bertram Frank, J. Christen, Sebastian Tamariz, R. Butté, N. Grandjean, P. Gilliot, Mathieu Gallart
DOI: 10.60893/figshare.jap.31288651
Cited by: 0

Abstract

The supplementary materials presents: structural properties of our sample measured by STEM and STEM-CL, a detailed description of the pump-probe experimental set-up, and additional TRPL decays.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Strong Light-Matter Interactions

Publication details

Journal / source
AIP Publishing
Publication date
26 February 2026
Language
EN