Epitaxial Growth and Physical Properties of Bi2Ru2O7 Thin Films on YSZ(111) Substrates

We systematically investigated the growth of Bi2Ru2O7 thin flms on Y-stabilizedZrO2(111) substrate using pulsed laser deposition by mapping the influence of thegrowth temperature and oxygen partial pressure on the phase stability, lattice parameters, and cation ratio. The results show the epitaxial stabilization requires aminimum growth temperature, which is rather insensitive to the pressure. Meanwhile, the Bi:Ru ration decreases when increasing growth temperature or decreasing pressure. By constructing the temperature-pressure phase diagram, an optimal growth window within the epitaxial phase was established. On the other hand, the electrical resistivity remains at a similar level within the epitaxial phase with only subtle changes to the temperature dependence, indicative of the robustness of the conductivity against composition variation. Our study provides a foundation for future investigations on thin flms and heterostructures that utilize Bi2Ru2O7.