Supporting Information
Abstract
The following content is provided in the supplementary material: (Figure S1) SEM-EDS of the patterned SiOx/PMMA layer before AS-ALD; (Figure S2) SEM-EDS after TaOx ALD on patterned SiOx/PMMA substrate; (Figure S3) SEM-EDS of the bilayer on patterned SiOx/PMMA; (Figure S4) Survey spectra for XPS of SnOx and TaOx on Si_natox and PMMA; (Table S1) Calculation of selectivity for AS-ALD; (Figure S5,Table S2) Elemental analysis of ALD SnOx deposited on blanket Sinatox and PMMA substrates before and after O2 plasma cleaning ; (Table S3) Calculation of SnOx and TaOx thicknesses in the bilayer using calibration curves, (Figure S6) XRR pattern of the as-deposited SnOx-TaOx bilayer on Sinatox; (Figure S7) HAADF-STEM-EDS maps for the "non-growth" regions of the patterned substrate; (Figure S8) XRR pattern and XRF spectra of the vanadium oxide layer on Si_natox.
Fields of Study & Subjects
Semiconductor materials and devices
Advancements in Photolithography Techniques
Copper Interconnects and Reliability
Publication details
- Journal / source
- AIP Publishing
- Publication date
- 13 January 2026