Hight Efficiency Selectively Activated Resistor-MOSFET Snubber Based on MOSFET Voltage Sensing

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Authors: Seo-Jun Lee, Kyung-Min Ra, Jeong-Hyo Lee, Jee-Hoon Jung
Cited by: 0

Abstract

The rapid adoption of electric vehicles has increased the demand for miniaturized power conversion systems with weight reduction features. Although increasing the switching frequency enable downsizing of the passive components, the high-frequency resonance between the MOSFET’s output capacitance and parasitic inductance induces severe voltage ringing. Conventional RCs, LCs, and active snubbers can mitigate those side effects but suffer from excessive loss, increased volume, and control complexity. This study proposes a snubber topology that replaces the snubber’s capacitor with a MOSFET, thereby reducing the equivalent capacitance and power losses in the snubber. An integrated overvoltage detection circit at the MOSFET gate driver actively damps ringing and secures precise voltage regulation. Experimental validation on a 60 W flyback converter demonstrated a power loss reduction of 0.3-0.6 W in the snubber circuit compared with that of conventional RC snubber, alongside enhanced voltage control performance. The proposed snubber circuit thus offers a compact and high efficiency solution for high frequency power converters.

Fields of Study & Subjects

Advanced DC-DC Converters Electromagnetic Compatibility and Noise Suppression Multilevel Inverters and Converters

Publication details

Journal / source
The Transactions of the Korean Institute of Power Electronics
Volume
31
Issue
1
Pages
26–32
Publication date
31 January 2026
Language
EN