Performance Evaluation of Nano-transistors with III-V Channel Materials for Space Applications

The continued miniaturization of transistors has led to modern electronics, but traditional silicon-based devices are facing severe challenges, particularly in extreme environments such as space. The severe space conditions, radiation, extreme temperature changes, and vacuum require devices that are more rugged and have higher performance. In this work, the performance of nano-transistors, specifically Junctionless Field-Effect Transistors (JLFETs), Fin Field-Effect Transistors (FinFETs), and Nanosheets using new III-V semiconductor materials, has been studied. Short-channel effects (SCEs) such as drain-induced barrier lowering (DIBL) and subthreshold swing (SS) become increasingly important as transistors are scaled down, degrading performance and increasing power consumption. Nano-transistors are prospective architectures that offer better gate control over the channel, essentially preventing these SCEs from happening as opposed to conventional planar transistors. Additionally, material substitution through the exploitation of III-V materials, such as Indium Gallium Arsenide (InGaAs) and Gallium Arsenide (GaAs), has the potential to increase operating speeds and reduce power, which are critical values in space-based systems. A comparative study has been conducted between the electrical characteristics of JLFETs and FinFETs using III-V materials, including on-current, off-current, and the ION/IOFF ratio. Their resistance to the stresses of individual space environments, including radiation damage and temperature cycling, is also considered in this work. The purpose of this work is to provide a comparative foundation for selecting the most desirable nano-transistor structure and material combination for future space applications, where maximum performance and reliability are the primary factors.