The influence of rare earth elements on the optical properties of silicon epitaxial films
Abstract
The results of growing erbium-doped silicon epitaxial layers using two different growth modes are presented: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE). It is shown that an erbium-doped silicon layer deposited by PFE on a cold substrate and subsequently annealed exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE
Fields of Study & Subjects
Photonic and Optical Devices
Semiconductor materials and interfaces
Silicon Nanostructures and Photoluminescence
Publication details
- Journal / source
- Texas Journal of Engineering and Technology
- Volume
- 52
- Pages
- 37–39
- Publication date
- 22 January 2026