Marginal Change in Conduction Band Offset Due to Interface States in 4H-SiC MOS Devices Having Different Oxides
Abstract
This short communication highlights the small variation in the conduction band offset (CBO) at the oxide/semiconductor interface of the metal-oxide-semiconductor (MOS) devices due to the variation in the interface state density at the interface known as Dit. In particular, a higher Dit gives a lower CBO and vice versa. In 4H-SiC MOS devices the CBO can change by up to 0.2 eV from 2.6 to 2.8 eV as observed experimentally. Trap-assisted tunneling is attributed to the higher tunneling current in MOS devices having higher interface state density leading to lower CBO.
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Semiconductor materials and interfaces
Publication details
- Journal / source
- Applied sciences research periodicals.
- Volume
- 4
- Issue
- 01
- Pages
- 62–63
- Publication date
- 15 January 2026