Direction-dependent Conductivity Effective Masses of Carriers at Velocity Saturation in Semiconductors
Abstract
This short communication further clarifies the physics-related concepts on semiconductors. It then consolidates the finding of the intrinsic Fermi energy level Ei in semiconductors, given the conductivity effective mass for electrons at velocity saturation, or determines the conductivity effective mass for electrons at velocity saturation, given the intrinsic Fermi energy level in a semiconductor. Here Silicon is used as an example.
Fields of Study & Subjects
Semiconductor materials and interfaces
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Publication details
- Journal / source
- Applied sciences research periodicals.
- Volume
- 4
- Issue
- 02
- Pages
- 04–06
- Publication date
- 5 March 2026
- Language
- EN