Continuous and Symmetric Drain Current Compact Model for Nanoscale Triple-Gate FinFETs
Abstract
In this work, we present a drain current compact model for nanoscale triple gate FinFETs satisfying continuity and source/drain symmetry. This is achieved by upgrading key equations of our original compact model. The formulated model is compact, valid in all regions of operation and its accuracy is validated through comparison with simulation data of nanoscale triple-gate transistor. The symmetry conditions are investigated and validated by performing the Gummel Symmetry Test.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Low-power high-performance VLSI design
Semiconductor materials and devices
Publication details
- Journal / source
- Emerging Tech Conference Edge Intelligence
- Pages
- 139–145
- Publication date
- 10 March 2026
- Language
- EN