Design and Performance Analysis of Quadruple Gate InAlN/GaN MOS-High Electron Mobility Transistor

The short-channel effects in single-gate (SG) field-effect transistors are significant due to poor control of the gate on the channel. Accordingly, in this work, we have designed a quadruple-gate (QG) AlInN/GaN MOS-HEMT and performed a comparative analysis of both SG and QG structures. The comparison of the different electrical parameters is performed for different temperature and doping concentration. It is analyzed that doping concentration significantly affects the electrical performance and the magnitude of electrical parameters significantly varies with variations in temperature and doping concentration. It is noticed that the cut-off frequency is comparatively higher for QG structure, thus highlighting it as a potential contender for different RF applications.