Mechanism of GaN high electron mobility transistor interface engineering in enhancing high-temperature and dynamic bias reliability
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Advanced Power Amplifier Design
Publication details
- Journal / source
- Acta Physica Sinica
- Volume
- 75
- Issue
- 8
- Publication date
- 1 January 2026