Research progress on scaling technology of amorphous indium gallium zinc oxide thin-film transistors
Abstract
展并持续演进。作为半导体领域的核心规律，摩尔定律认为：芯片单位面积内集 成的晶体管数量约每 18 至 24 个月实现翻倍 [1][2][3][4] [17][18][19][20][21][22][23][24][25][26][27] ， 对其尺寸、功耗、集成密度与性能的要求日趋严苛 [28] 。在动态随机存取存储器 (Dynamic Random Access Memory，简记为 DRAM)领域，传统 DRAM 单元通
Fields of Study & Subjects
Thin-Film Transistor Technologies
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Publication details
- Journal / source
- Acta Physica Sinica
- Volume
- 75
- Issue
- 8
- Publication date
- 1 January 2026