Effects of Different Sulphur Levels and Application Methods on Growth, Yield Attributes and Yields of Chickpea (Cicer arietinum L.) under Irrigated Conditions of Rajasthan

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Authors: Prahalad Kumar Prajapat, N.K. Pareek, Ashish Raja Jangid, Arun Pratap Singh, Arun C Kanagalabavi, Mahesh Mavanjee Mahale
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Abstract

A field experiment was conducted at Agronomy farm, College of Agriculture, Swami Keshwanand Rajasthan Agricultural University, Bikaner during rabi, 2019-20. The experiment was laid out in split plot design with three replications assigning four levels of basal application of sulphur (0, 20, 40 and 60 kg ha-1) to main plots and four concentrations of foliar spray of liquid sulphur (0, 0.1, 0.2 and 0.3% sulphur) done at 65 and 75 DAS to sub plots.The results show that basal applications of sulphur at 40 kg ha-1 resulted significant influence on growth viz., dry matter accumulation at 90 DAS and harvest, chlorophyll content at 85 DAS and plant height at harvest, yield attributes viz., number of pods plant-1 and test weight and yield viz., seed, straw and biological yield over control and basal applications of sulphur at 20 kg ha-1, which was being at par with basal applications of sulphur at 60 kg ha-1. Foliar spray of liquid sulphur (0.2%) significantly increased growth viz., dry matter accumulation at 90 DAS and harvest, chlorophyll content at 85 DAS and plant height at harvest, yield attributes viz., number of pods plant-1 and test weight and yield viz., seed, straw and biological yield over control and foliar spray of liquid sulphur (0.1%), which was being at par with foliar spray of liquid sulphur (0.3%). For higher growth, yield and economical of chickpea under irrigated conditions of Rajasthan, apply sulphur at 40 kg ha-1 as basal dose along with 0.2% foliar spray of liquid sulphur at 65 and 75 DAS.

Fields of Study & Subjects

Agricultural Science and Fertilization Nitrogen and Sulfur Effects on Brassica Agronomic Practices and Intercropping Systems

Publication details

Journal / source
Journal of Scientific Research and Reports
Volume
32
Issue
1
Pages
1–9
Publication date
1 January 2026