Heteroepitaxial Strain Engineering and Interfacial Energy Transfer Boosting Optoelectronic Properties in C60 WS2 van der Waals Heterostructures

Engineered van der Waals vdW heterostructures, combining molecular semiconductors and atomically amp; 64258;at nanomaterials, o amp; 64256;er vast opportunities to tailor optoelectronic properties at heterointerfaces. Here, the heteroepitaxial assembly of C 60 molecules on monolayer tungsten disul amp; 64257;de ML WS2 , where an anisotropic compression strain within the C60 lattice at the heterointerface induces the formation of 1D polymeric C 60 strings and activates otherwise symmetry forbidden S1 amp; 8594; S0 optical transitions, is reported. This, coupled with interfacial energy transfer from ML WS2 to C 60 , results in a remarkable 310 enhancement in the PL intensity compared to disordered C60 aggregates. The resulting C 60 ML WS2 transistors exhibit superior electrical and optoelectronic performance, achieving a charge carrier mobility of 10.4 cm 2 V amp; 8722;1 s amp; 8722;1 , facilitated by an ultralow 230 meV contact barrier with Au electrodes. These devices demonstrate a superior photoresponsivity of 46.4 A W amp; 8722;1 and a detectivity of 3.6 10 12 Jones, greatly outperforming pristine ML WS2 counterpart devices