Highly Reliable and Scalable Ferroelectric AlScN Thin Films for Future Advanced Memory Technology

Tokyo Tech Research Repository (Tokyo Institute of Technology) 2026 Open access

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Authors: ChenSi-Meng, Si-Meng Chen
Cited by: 0

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Ferroelectric and Piezoelectric Materials Semiconductor materials and devices

Publication details

Journal / source
Tokyo Tech Research Repository (Tokyo Institute of Technology)
Publication date
13 January 2026
Language
EN