Antiferromagnetic Tunnel Junctions (AFMTJs) for In-Memory Computing: Modeling and Case Study

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Authors: Yousuf Choudhary, Tosiron Adegbija
Cited by: 0

Abstract

Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice Landau-Lifshitz-Gilbert (LLG) dynamics with circuit-level modeling. SPICE-based simulations show that AFMTJs achieve ~8x lower write latency and ~9x lower write energy than conventional MTJs. When integrated into an in-memory computing architecture, AFMTJs deliver 17.5x average speedup and nearly 20x energy savings versus a CPU baseline-significantly outperforming MTJ-based IMC. These results establish AFMTJs as a compelling primitive for scalable, low-power computing.

Fields of Study & Subjects

Magnetic properties of thin films Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
arXiv (Cornell University)
Publication date
9 February 2026
Language
EN
Document type
Preprint