Antiferromagnetic Tunnel Junctions (AFMTJs) for In-Memory Computing: Modeling and Case Study
Abstract
Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice Landau-Lifshitz-Gilbert (LLG) dynamics with circuit-level modeling. SPICE-based simulations show that AFMTJs achieve ~8x lower write latency and ~9x lower write energy than conventional MTJs. When integrated into an in-memory computing architecture, AFMTJs deliver 17.5x average speedup and nearly 20x energy savings versus a CPU baseline-significantly outperforming MTJ-based IMC. These results establish AFMTJs as a compelling primitive for scalable, low-power computing.
Fields of Study & Subjects
Magnetic properties of thin films
Advanced Memory and Neural Computing
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- arXiv (Cornell University)
- Publication date
- 9 February 2026
- Language
- EN
- Document type
- Preprint