High performance asymmetric Doherty PA
Abstract
This paper describes an asymmetric Doherty power ampliffer architecture operating at 3.28 GHz for 5G appliations. Efffciency is a key parameter for RF (radio frequency) transmitters. The efffciency of an RF transmitter is usually measured as the ratio of the output RF power to the total input power consumed by the transmitter. Higher efffciency means that less power is wasted as heat or other losses. In a base station, the efffciency affects the overall performance and operating costs. In mobile phones, power consumption directly affects the battery life and the performance of the device.Using a structured design with 6W GaN HEMT technology, the implemented asymmetric Doherty power ampliffer (PA) achieves 46.44% efffciency at 9.5 dB back-off, which is a considerable advance on the 36% efffciency of the traditional Doherty conffguration at 6 dB back-off. Furthermore, the asymmetric architecture demonstrates enhanced saturation characteristics, achieving 38 dBm output power while maintaining 66% peak efffciency, compared to 37 dBm in the traditional design. This asymmetric Doherty power ampliffer conffguration offers signiffcant improvements in both deep back-off efffciency and output power capability, providing an advanced solution for high-efffciency power systems, particularly for next-generation systems.
Fields of Study & Subjects
Advanced Power Amplifier Design
PAPR reduction in OFDM
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- DR-NTU (Nanyang Technological University)
- Publication date
- 1 January 2026
- Language
- EN
- Document type
- Thesis